power transistors 1 publication date: march 2003 sjd00232bed 2SD1776A silicon npn triple diffusion planar type for power amplification with high forward current transfer ratio features ? high forward current transfer ratio h fe ? satisfactory linearity of forward current transfer ratio h fe ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 25 ma, i b = 0 80 v collector-base cutoff current (emitter open) i cbo v cb = 100 v, i e = 0 100 a collector-emitter cutoff current (base open) i ceo v ce = 40 v, i b = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 0 100 a forward current transfer ratio * h fe v ce = 4 v, i c = 300 ma 500 1 500 ? collector-emitter saturation voltage v ce(sat) i c = 1 a, i b = 25 ma 1.0 v base-emitter saturation voltage v be(sat) i c = 1 a, i b = 25 ma 1.2 v transition frequency f t v ce = 12 v, i c = 200 ma, f = 10 mhz 40 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 30 pf (common base, input open circuited) turn-on time t on i c = 1 a, i b1 = 25 ma, i b2 = ? 25 ma, 0.6 s storage time t stg v cc = 50 v 2.5 s fall time t f 1.0 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 100 v collector-emitter voltage (base open) v ceo 80 v emitter-base voltage (collector open) v ebo 6v collector current i c 2a peak collector current i cp 4a base current i b 0.5 a collector power p c 25 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe 500 to 1 000 800 to 1 500 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package
2SD1776A 2 sjd00232bed v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c t on , t stg , t f ? i c safe operation area 0 10 30 20 40 0 150 25 125 50 100 75 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2.0w) (1) (2) (3) (4) 012 210 48 6 0 0.4 1.2 0.8 1.6 i b =3ma t c =25?c 2ma 1ma 0.8ma 0.6ma 0.4ma 0.2ma 0.1ma collector current i c (a) collector-emitter voltage v ce (v) 1 0.1 0.01 0.01 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =40 t c =100?c 25?c ?5?c 0.01 0.1 1 10 0.01 1 0.1 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =40 25?c 100?c t c =?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c (a) v ce =4v t c =100?c 25?c ?5?c 0.01 0.1 1 10 0.1 1 10 100 1 000 collector current i c (a) transition frequency f t (mhz) v ce =12v f=10mhz t c =25?c 0.01 0.1 1 10 100 0 2.5 2.0 1.5 1.0 0.5 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) t stg t f t on pulsed t w =1ms duty cycle=1% i c /i b =40 (i b1 =? b2 ) v cc =50v t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms dc t=1ms
2SD1776A 3 sjd00232bed r th ? t 10 ? 2 10 ? 1 1 10 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink
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